Manufacturer Part #
IRFR4510TRPBF
Single N-Channel 100 V 13.9 mOhm 54 nC HEXFET® Power Mosfet - TO-252-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2000 per Reel Package Style:TO-252-3 (DPAK) Mounting Method:Surface Mount | ||||||||||
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Infineon IRFR4510TRPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
Infineon IRFR4510TRPBF - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 13.9mΩ |
| Rated Power Dissipation: | 143W |
| Qg Gate Charge: | 54nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 63A |
| Turn-on Delay Time: | 18ns |
| Turn-off Delay Time: | 42ns |
| Rise Time: | 42ns |
| Fall Time: | 34ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Input Capacitance: | 3031pF |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
2000 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount