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Manufacturer Part #

IRFR4510TRPBF

Single N-Channel 100 V 13.9 mOhm 54 nC HEXFET® Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFR4510TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 13.9mΩ
Rated Power Dissipation: 143W
Qg Gate Charge: 54nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 63A
Turn-on Delay Time: 18ns
Turn-off Delay Time: 42ns
Rise Time: 42ns
Fall Time: 34ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Input Capacitance: 3031pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
2000
Multiple Of:
2000
Total
$1,000.00
USD
Quantity
Unit Price
2,000
$0.50
4,000
$0.495
6,000
$0.49
10,000+
$0.48
Product Variant Information section