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onsemi | AFGB40T65SQDN

Manufacturer Part #

AFGB40T65SQDN

650V 40A FS4 High speed version, for OBC application in D2pak IGBT

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi AFGB40T65SQDN - Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 80A
Power Dissipation-Tot: 238W
Gate - Emitter Voltage: ±20V
Pulsed Collector Current: 160A
Collector - Emitter Saturation Voltage: 1.6V
Turn-on Delay Time: 17.6ns
Turn-off Delay Time: 75.2ns
Qg Gate Charge: 76nC
Reverse Recovery Time-Max: 131ns
Leakage Current: 400nA
Input Capacitance: 2495pF
Thermal Resistance: 0.63°C/W
Operating Temp Range: -55°C to +175°C
No of Terminals: 3
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
800
Multiple Of:
800
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Total
$2,272.00
USD
Quantity
Unit Price
800
$2.84
1,600
$2.82
2,400+
$2.80
Product Variant Information section