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Référence fabricant

MJD243G

MJD Series 100 V 4 A NPN Complementary Silicon Plastic Power Transistor TO-252-3

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
onsemi MJD243G - Caractéristiques techniques
Attributes Table
Polarity: NPN
Type: Power Transistor
CE Voltage-Max: 100V
Collector Current Max: 4A
Power Dissipation-Tot: 1.4W
DC Current Gain-Min: 40
Style d'emballage :  TO-252-3 (DPAK)
Méthode de montage : Tab Mount
Fonctionnalités et applications

Designed for low voltage, low-power, high-gain audio amplifier applications.

Features:

  • Collector-Emitter Sustaining Voltage
    • VCEO(sus) = 100 Vdc (Min) @ IC
    • = 10 mAdc
  • High DC Current Gain
    • hFE = 40 (Min) @ IC
      = 200 mAdc
      = 15 (Min) @ IC = 1.0 Adc
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves (“-1” Suffix)
  • Low Collector-Emitter Saturation Voltage
    • VCE(sat) = 0.3 Vdc (Max) @ IC
      = 500 mAdc
      = 0.6 Vdc (Max) @ IC = 1.0 Adc
  • High Current-Gain - Bandwidth Product
    • fT = 40 MHz (Min) @ IC
      = 100 mAdc
  • Annular Construction for Low Leakage
  • ICBO = 100 nAdc @ Rated VCB
  • Epoxy Meets UL 94 V-0 @ 0.125 in
  • ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V
  • These are Pb-Free Packages

Learn more about the MJD2 family of Bipolar Transistors

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
16 Semaines
Commande minimale :
2325
Multiples de :
75
Total 
639,38 $
USD
Quantité
Prix unitaire
75
$0.29
300
$0.285
1 125
$0.275
3 750+
$0.265
Product Variant Information section