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Infineon | BSC026N04LSATMA1

Manufacturer Part #

BSC026N04LSATMA1

BSC026N04LS Series 40 V 119 A 2.6 mOhm N-Ch OptiMOS™ Power-MOSFET - PG-TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2506
Product Specification Section
Infineon BSC026N04LSATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 2.6mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 32nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 23A
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Input Capacitance: 2300pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
15,000
USA:
15,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,950.00
USD
Quantity
Unit Price
5,000
$0.39
10,000
$0.385
15,000
$0.38
20,000+
$0.375
Product Variant Information section