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Diodes Incorporated | DMG4413LSS-13

Manufacturer Part #

DMG4413LSS-13

DMG4413LSS Series 30 V 10.5 A P-Channel Enhancement Mode Mosfet - SO-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2330
Product Specification Section
Diodes Incorporated DMG4413LSS-13 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 7.5mΩ
Rated Power Dissipation: 1.7|W
Qg Gate Charge: 46nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 12A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 160ns
Rise Time: 9ns
Fall Time: 66ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.6V
Height - Max: 1.5mm
Length: 4.95mm
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
40,000
USA:
40,000
On Order:
0
Factory Stock:Factory Stock:
37,500
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$575.00
USD
Quantity
Unit Price
2,500
$0.23
5,000+
$0.225
Product Variant Information section