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Référence fabricant

FDC637AN

N-Channel 20V 0.024 Ohm 2.5V Specified PowerTrench Mosfet

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
onsemi FDC637AN - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.024Ω
Rated Power Dissipation: 0.8|W
Qg Gate Charge: 10.5nC
Style d'emballage :  SSOT-6
Méthode de montage : Surface Mount
Fonctionnalités et applications

The FDC637AN is a 20 V 0.024 Ω , 2.5 V Specified PowerTrench N-Channel Mosfet available in a SSOT-6 package .

This N-Channel 2.5 V specified MOSFET is advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.

Product Features:

  • 6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V, RDS(on) = 0.032 Ω @ VGS = 2.5 V
  • Fast switching speed.
  • Low gate charge (10.5nC typical).
  • High performance trench technology for extremelylow RDS(ON) .
  • SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick).

Applications:

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Military & Civil Aerospace
  • Routers & LAN Switches
  • Medical Electronics/Devices
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
9 Semaines
Commande minimale :
3000
Multiples de :
3000
Total 
870,00 $
USD
Quantité
Prix unitaire
3 000
$0.29
9 000
$0.285
15 000+
$0.28
Product Variant Information section