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Manufacturer Part #
FDD7N20TM
N-Channel 200 V 0.69 Ohm Surface Mount UniFET Mosfet TO-252-3
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:2500 per Reel Package Style:TO-252-3 (DPAK) Mounting Method:Surface Mount |
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| Date Code: | 2418 | ||||||||||
onsemi FDD7N20TM - Product Specification
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onsemi FDD7N20TM - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 0.69Ω |
| Rated Power Dissipation: | 43|W |
| Qg Gate Charge: | 5nC |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
Features & Applications
The FDD7N20TM is a 200 V,5A Surface Mount N-Channel Power Field Effect Transistor Available in a TO-252 Package. It works at a Operating Temperature ranging between -55 to +150 °C.
These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especically tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched mode power supplies and active power factor correction.
Features:
- RDS(on) = 0.58 Ω ( Typ. ) @ VGS = 10 V, ID = 2.5 A
- Low gate charge( Typ. 5 nC )
- Low Crss ( Typ. 5 pF )
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS compliant
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount