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onsemi | FDD86250

Manufacturer Part #

FDD86250

FDD86250 Series 150 V 51 A 22 mOhm N-Channel PowerTrench® MOSFET - DPAK-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDD86250 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 45mΩ
Rated Power Dissipation: 132W
Qg Gate Charge: 33nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 51A
Turn-on Delay Time: 20ns
Turn-off Delay Time: 10ns
Rise Time: 32ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Shielded Gate
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 1585pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The FDD86250 N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features:

  • Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A
  • Max rDS(on) = 31 mΩ at VGS = 6 V, ID = 6.5 A
  • 100% UIL tested
  • RoHS Compliant

Applications:

  • DC - DC Conversion
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,487.50
USD
Quantity
Unit Price
2,500
$0.595
5,000
$0.59
7,500
$0.585
10,000
$0.58
12,500+
$0.57
Product Variant Information section