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Référence fabricant

FDD86250

FDD86250 Series 150 V 51 A 22 mOhm N-Channel PowerTrench® MOSFET - DPAK-3

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
onsemi FDD86250 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 45mΩ
Rated Power Dissipation: 132W
Qg Gate Charge: 33nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 51A
Turn-on Delay Time: 20ns
Turn-off Delay Time: 10ns
Rise Time: 32ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Shielded Gate
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 1585pF
Style d'emballage :  TO-252-3 (DPAK)
Méthode de montage : Surface Mount
Fonctionnalités et applications

The FDD86250 N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features:

  • Max rDS(on) = 22 mO at VGS = 10 V, ID = 8 A
  • Max rDS(on) = 31 mO at VGS = 6 V, ID = 6.5 A
  • 100% UIL tested
  • RoHS Compliant

Applications:

  • DC - DC Conversion

View the complete FDD8x series Mosfets

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
12 Semaines
Commande minimale :
2500
Multiples de :
2500
Total 
1 487,50 $
USD
Quantité
Prix unitaire
2 500
$0.595
5 000
$0.59
7 500
$0.585
10 000
$0.58
12 500+
$0.57
Product Variant Information section