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Référence fabricant


Single N-Channel 55 V 8 mOhm 146 nC HEXFET® Power Mosfet - TO-220-3

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Code de date: 2220
Product Specification Section
Infineon IRF3205PBF - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 8mΩ
Rated Power Dissipation: 200W
Qg Gate Charge: 146nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 110A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 50ns
Rise Time: 101ns
Fall Time: 65ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Height - Max: 4.83mm
Length: 10.67mm
Input Capacitance: 3247pF
Style d'emballage :  TO-220-3 (TO-220AB)
Fonctionnalités et applications

The IRF3205PBF is an Advanced HEXFET® Power MOSFET from International Rectifier.  The HEXFET® utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Features include Advanced Process Technology, Ultra Low On-Resistance, Dynamic dv/dt Rating, 175°C Operating Temperature, Fast Switching, Fully Avalanche Rated, and Lead-Free.  For more information, please see the datasheet above.


The IRF3205PBF comes in a TO-220 package, and is lead free as indicated by the PBF.
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