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Référence fabricant
IRF3205PBF
Single N-Channel 55 V 8 mOhm 146 nC HEXFET® Power Mosfet - TO-220-3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220-3 (TO-220AB) | ||||||||||
| Code de date: | 2215 | ||||||||||
Infineon IRF3205PBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description:Change of wafer production location from Infineon Technologies Temecula, USA to Sichuan Gen Microelectronics co.LTD, China for several Gen5 and Gen 7 MOSFET Reason: The wafer production of the affected products will be transferred to Sichuan Gen Microelectronics co.LTD according to global Infineon production strategy.
Change Description:Capacity extension with introduction of an additional assembly and final test location at Huayi Microelectronics Co., Ltd (HYME), China for TO220 3L MOSFET products in Gen 5.X/7.X/10.X (up to Hex 4.4). Reason: Expansion of assembly and final test production to assure continuity of supply and enable flexible manufacturing.
Statut du produit:
Infineon IRF3205PBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 8mΩ |
| Rated Power Dissipation: | 200W |
| Qg Gate Charge: | 146nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 110A |
| Turn-on Delay Time: | 14ns |
| Turn-off Delay Time: | 50ns |
| Rise Time: | 101ns |
| Fall Time: | 65ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Height - Max: | 4.83mm |
| Length: | 10.67mm |
| Input Capacitance: | 3247pF |
| Style d'emballage : | TO-220-3 (TO-220AB) |
Fonctionnalités et applications
The IRF3205PBF is an Advanced HEXFET® Power MOSFET from International Rectifier. The HEXFET® utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Features include Advanced Process Technology, Ultra Low On-Resistance, Dynamic dv/dt Rating, 175°C Operating Temperature, Fast Switching, Fully Avalanche Rated, and Lead-Free. For more information, please see the datasheet above.
The IRF3205PBF comes in a TO-220 package, and is lead free as indicated by the PBF.
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)