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Manufacturer Part #

IRF7105TRPBF

Dual N/P-Channel 25 V 0.1/0.25 Ohm 9.4/10 nC HEXFET® Power Mosfet -SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF7105TRPBF - Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
Drain-to-Source Voltage [Vdss]: 25V/-25V
Drain-Source On Resistance-Max: 0.1Ω/0.25Ω
Rated Power Dissipation: 2|W
Qg Gate Charge: 9.4nC/10nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$1,060.00
USD
Quantity
Unit Price
4,000
$0.265
8,000
$0.26
20,000+
$0.255
Product Variant Information section