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ROHM | RS6N120BHTB1

Manufacturer Part #

RS6N120BHTB1

RS6N120 Series 80 V 135A 104W N-Channel Surface Mount MOSFET HSOP-8

ECAD Model:
Mfr. Name: ROHM
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
ROHM RS6N120BHTB1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 4.9mΩ
Rated Power Dissipation: 3W
Qg Gate Charge: 53nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 135A
Turn-on Delay Time: 32ns
Turn-off Delay Time: 73ns
Rise Time: 47ns
Fall Time: 35ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: OptiMOS
Input Capacitance: 3420pF
Package Style:  HSOP-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
21 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,350.00
USD
Quantity
Unit Price
2,500
$1.34
5,000+
$1.32
Product Variant Information section