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Manufacturer Part #

SIHD4N80E-GE3

AVAILABLE Q2/2016

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIHD4N80E-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 1.27Ω
Rated Power Dissipation: 69W
Qg Gate Charge: 16nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 4.3A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 26ns
Rise Time: 7ns
Fall Time: 20ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 622pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
30,000
Factory Lead Time:
8 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,505.00
USD
Quantity
Unit Price
3,000
$0.835
6,000
$0.82
9,000+
$0.81
Product Variant Information section