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Référence fabricant
SIHFRC20TR-GE3
SIHFRC20 Series 600 V 2 A 4.4 Ohm Single N-Channel Power MOSFET - TO-252
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :2000 par Reel Style d'emballage :TO-252-3 (DPAK) Méthode de montage :Surface Mount | ||||||||||
| Code de date: | |||||||||||
Vishay SIHFRC20TR-GE3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change: Vishay Siliconix announces the capacity transfer to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelReason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Tuesday September 30, 2025
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
This advisory is being provided to you as an announcement that we will introduce an improved packing reel design change for Vishay Siliconix TO252 HVM & SOT223 packages at ATX, Weihai, China.The change is to standardize with Vishay Siliconix LVM products which will be implemented starting from January 2023 onwards and original reel availability will depend on distribution inventory status then.Please refer to 2nd page of this advisory letter for affected parts list.There will be no effect on the quality, reliability, or performance.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SIHFRC20TR-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/sihfrc20tr-ge3-vishay-3070119
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SIHFRC20TR-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/sihfrc20tr-ge3-vishay-3070119
Vishay SIHFRC20TR-GE3 - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 4.4Ω |
| Rated Power Dissipation: | 42W |
| Qg Gate Charge: | 18nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 2A |
| Turn-on Delay Time: | 10ns |
| Turn-off Delay Time: | 30ns |
| Rise Time: | 23ns |
| Fall Time: | 25s |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Input Capacitance: | 350pF |
| Style d'emballage : | TO-252-3 (DPAK) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
2000 par Reel
Style d'emballage :
TO-252-3 (DPAK)
Méthode de montage :
Surface Mount