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Référence fabricant
STD7NK40ZT4
N-Channel 400 V 1 Ohm Surface Mount SuperMESH Power MosFet - TO-252
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| Nom du fabricant: | STMicroelectronics | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :2500 par Reel Style d'emballage :TO-252-3 (DPAK) Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2514 | ||||||||||
STMicroelectronics STD7NK40ZT4 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=STD7NK40ZT4&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/std7nk40zt4-stmicroelectronics-7311392
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=STD7NK40ZT4&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/std7nk40zt4-stmicroelectronics-7311392
STMicroelectronics STD7NK40ZT4 - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 400V |
| Drain-Source On Resistance-Max: | 1Ω |
| Rated Power Dissipation: | 70|W |
| Qg Gate Charge: | 19nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 5.4A |
| Turn-on Delay Time: | 15ns |
| Turn-off Delay Time: | 30ns |
| Rise Time: | 15ns |
| Fall Time: | 12ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3.75V |
| Height - Max: | 2.4mm |
| Length: | 6.6mm |
| Input Capacitance: | 535pF |
| Style d'emballage : | TO-252-3 (DPAK) |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The STD7NK40ZT4 is a SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Features:
- Typical RDS(on) = 0.85 O
- Extremely high dv/dt Capability
- 100% Avalanche Tested
- Gate Charge Minimized
- Very low intrinsic capacitances
- Very good manufacturing Repeatibility
Applications:
- High Current,High Speeed Switching
- Ideal for OFF-LINE Power Supplies, Adaptors and PFC
- Lighting
Emballages disponibles
Qté d'emballage(s) :
2500 par Reel
Style d'emballage :
TO-252-3 (DPAK)
Méthode de montage :
Surface Mount