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STMicroelectronics | STP18N65M2

Manufacturer Part #

STP18N65M2

Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220AB Tube

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2123
Product Specification Section
STMicroelectronics STP18N65M2 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.33Ω
Rated Power Dissipation: 110W
Qg Gate Charge: 20nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 12A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 46ns
Rise Time: 7.5ns
Fall Time: 12.5ns
Gate Source Threshold: 3V
Technology: MDmesh
Input Capacitance: 770pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
7,000
USA:
7,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,170.00
USD
Quantity
Unit Price
1,000
$1.17
2,000
$1.16
3,000
$1.15
5,000+
$1.14
Product Variant Information section