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STMicroelectronics | STP80NF10

Référence fabricant

STP80NF10

N-Channel 100 V 15 mOhm Flange Mount STripFET™ II Power MOSFET - TO-220

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date: 2349
Product Specification Section
STMicroelectronics STP80NF10 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.015Ω
Rated Power Dissipation: 300W
Qg Gate Charge: 135nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 80A
Turn-on Delay Time: 26ns
Turn-off Delay Time: 116ns
Rise Time: 80ns
Fall Time: 60ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Input Capacitance: 5500pF
Style d'emballage :  TO-220-3 (TO-220AB)
Méthode de montage : Through Hole
Fonctionnalités et applications

The STP80NF10 is a Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements.

Features:

  • Exceptional dv/dt capability
  • 100% Avalanche tested
  • Application oriented characterization

Applications:

  • Switching applications

View the Complete family of STP8 Mosfet Transistors

Pricing Section
Stock global :
440
États-Unis:
440
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
15 Semaines
Commande minimale :
20
Multiples de :
1
Total 
22,20 $
USD
Quantité
Prix unitaire
20
$1.11
75
$1.08
250
$1.06
750
$1.04
2 500+
$0.98
Product Variant Information section
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