text.skipToContent text.skipToNavigation

Référence fabricant

STP80NF12

N-Channel 120 V 18 mΩ 140 nC Flange Mount STripFET II Power Mosfet - TO-220

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STP80NF12 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 120V
Drain-Source On Resistance-Max: 0.018Ω
Rated Power Dissipation: 300|W
Qg Gate Charge: 140nC
Style d'emballage :  TO-220-3 (TO-220AB)
Fonctionnalités et applications

The STP80NF12 is a MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements.

Features:

  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Application oriented characterization

Applications:

  • Switching applications

View the Complete family of STP8 Mosfet Transistors

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
13 Semaines
Commande minimale :
1000
Multiples de :
1000
Total 
995,00 $
USD
Quantité
Prix unitaire
1 000
$0.995
2 000
$0.98
3 000
$0.975
4 000
$0.97
5 000+
$0.95
Product Variant Information section