Référence fabricant
STP80NF12
N-Channel 120 V 18 mΩ 140 nC Flange Mount STripFET II Power Mosfet - TO-220
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| Nom du fabricant: | STMicroelectronics | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :1000 par Box Style d'emballage :TO-220-3 (TO-220AB) |
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STMicroelectronics STP80NF12 - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Statut du produit:
STMicroelectronics STP80NF12 - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 120V |
| Drain-Source On Resistance-Max: | 0.018Ω |
| Rated Power Dissipation: | 300|W |
| Qg Gate Charge: | 140nC |
| Style d'emballage : | TO-220-3 (TO-220AB) |
Fonctionnalités et applications
The STP80NF12 is a MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements.
Features:
- Exceptional dv/dt capability
- 100% avalanche tested
- Application oriented characterization
Applications:
- Switching applications
View the Complete family of STP8 Mosfet Transistors
Emballages disponibles
Qté d'emballage(s) :
1000 par Box
Style d'emballage :
TO-220-3 (TO-220AB)