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STMicroelectronics | STW18N60DM2

Manufacturer Part #

STW18N60DM2

STW18N60 Series 600 V 12 A 295 mOhm Through Hole N-Ch Power MOSFET - TO-247-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STW18N60DM2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 295mΩ
Rated Power Dissipation: 110W
Qg Gate Charge: 20nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 12A
Turn-on Delay Time: 13.5ns
Turn-off Delay Time: 9.5ns
Rise Time: 8ns
Fall Time: 32.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 800pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$46.80
USD
Quantity
Unit Price
30
$1.56
120
$1.54
600
$1.51
1,200
$1.50
3,750+
$1.47
Product Variant Information section