text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. FDD3N40TM

onsemi | FDD3N40TM

Manufacturer Part #

FDD3N40TM

N-Channel 400 V 3.4 Ohm Surface Mount UniFET Mosfet - TO-252-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDD3N40TM - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 400V
Drain-Source On Resistance-Max: 3.4Ω
Rated Power Dissipation: 30|W
Qg Gate Charge: 4.5nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The FDD3N40TM is a N–Channel enhancement mode power field effect transistors are produced using DMOS technology

This advanced technology has been especially tailored to minimize on–state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction

Features:

  • 2 A, 400 V, RDS(on) = 3.4 ? @VGS = 10 V
  • Low gate charge ( typical 4.5 nC)
  • Low Crss ( typical 3.7 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
5000
Multiple Of:
2500
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,400.00
USD
Quantity
Unit Price
2,500
$0.28
7,500
$0.275
25,000+
$0.27
Product Variant Information section