Les commandes expédiées à l’extérieur des États-Unis seront en attente pendant que l’entreprise évalue les impacts tarifaires.Veuillez contacter votre vendeur pour obtenir de l’aide.
Livraison gratuite aux États-Unis continentaux à partir de 50 $ US. Des conditions s'appliquent
Référence fabricant
IXTH110N10L2
N-Channel 100 V 18 mOhm Through Hole Power Mosfet - TO-247-3
| | |||||||||||
| | |||||||||||
| Nom du fabricant: | Littelfuse - IXYS | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :30 par Tube Style d'emballage :TO-247-3 Méthode de montage :Through Hole | ||||||||||
| Code de date: | |||||||||||
Littelfuse - IXYS IXTH110N10L2 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
*****FPCN105537 UPDATE/MULITIPLE CHANGE****Description of Change:This PCN is a revised version of the previously issued PCN LFPCN-DMI-BTA-2024-001/01, dated May 13, 2024, which informed you of an additional backend manufacturing site for the discrete MOSFET and IGBT parts. This updated version includes change in lead finish.1. Addition of in-house assembly line in Lipa as a new supplier and alternative source for TO-247-3L, TO-247HV, PLUS247, PLUS TO-247HV (PLUS247HV), ISO247 and ISOPLUS247 packages. This will further streamline and enhance our supply chain efficiencies.2. Change in device marking3. Change in inner box and tube labels, and tube dimensions: 4. Change in lead finish*New country of origin: Philippines
Littelfuse would like to notify you of an addition in the backend manufacturing of the discrete MOSFET & IGBT parts listed under appendix C.DESCRIPTION OF CHANGE:1. Addition of in-house assembly line in Lipa as a new supplier and alternative source for TO-247-3L, TO-247HV, PLUS247, PLUS TO-247HV (PLUS247HV), ISO247 and ISOPLUS247 packages. This will further streamline and enhance our supply chain efficiencies.2. Change in device marking: Details under APPENDIX A.3. Change in inner box and tube labels, and tube dimensions: Details under APPENDIX A.
SUBJECT: Assembled Device Marking Format Changes and Outer Box/Bag Label Format Changes - Change to the assembled device marking format The change affects the date code and tracking number identification. This change does not affect the form, fit or function of the product. See attached for more details - Change to the box label format: The paper sticker label found on the outer box or bag will see a format change that incorporates the Littelfuse logo along with the IXYS logo. The printed information remains the same (PN, Qty, Lot #, date code, country of origin). The change allows for a improved readability. This change does not affect the form, fit or function of the product. REMARKS: This changes from the original IXYS Corporation marking/labeling format to the new IXYS LLC-USA format is being done to conform to the SAP product management system requirements of our parent company Littelfuse Corporation.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IXTH110N10L2&field4=Littelfuse - IXYS&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/ixth110n10l2-littelfuse-ixys-1024318
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IXTH110N10L2&field4=Littelfuse - IXYS&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/ixth110n10l2-littelfuse-ixys-1024318
Littelfuse - IXYS IXTH110N10L2 - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 18mΩ |
| Rated Power Dissipation: | 600|W |
| Qg Gate Charge: | 260nC |
| Style d'emballage : | TO-247-3 |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
30 par Tube
Style d'emballage :
TO-247-3
Méthode de montage :
Through Hole