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Référence fabricant
SI1467DH-T1-E3
Single P-Channel 20 V 0.09 Ohms Surface Mount Power Mosfet - SOT-363
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :SOT-363 (SC-70-6, SC-88) Méthode de montage :Surface Mount | ||||||||||
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Vishay SI1467DH-T1-E3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change: To meet the increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer BGBM process (Backside-Grind and Backside-Metallization) for commercial Low-Voltage Power MOSFETs at in-house Siliconix Philippines Inc.(SPI) facility in Binan, Philippines.Reason for Change: Capacity Expansion
Description of Change: To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Reason for Change: Manufacturing Capacity Expansion
Description of Change: .To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Welnew-Shanghai was founded in 2006 as a leading provider of Hall sensor products, semiconductor process service, and equipments.Welnew-Shanghai has achieved the certifications, including IATF-16949, ISO-9001, and ISO-14001.Reason for Change: Manufacturing Capacity Expansion
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SI1467DH-T1-E3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/si1467dh-t1-e3-vishay-1348143
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SI1467DH-T1-E3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/si1467dh-t1-e3-vishay-1348143
Vishay SI1467DH-T1-E3 - Caractéristiques techniques
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 0.09Ω |
| Rated Power Dissipation: | 1.5|W |
| Qg Gate Charge: | 9nC |
| Style d'emballage : | SOT-363 (SC-70-6, SC-88) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
SOT-363 (SC-70-6, SC-88)
Méthode de montage :
Surface Mount