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STMicroelectronics | STP110N8F6

Manufacturer Part #

STP110N8F6

Single N-Channel 80 V 200 W 150 nC Silicon Through Hole Mosfet - TO-220-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STP110N8F6 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 0.0065Ω
Rated Power Dissipation: 200W
Qg Gate Charge: 150nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 110A
Turn-on Delay Time: 24ns
Turn-off Delay Time: 162ns
Rise Time: 61ns
Fall Time: 48ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Technology: Si
Height - Max: 9.15mm
Length: 10.4mm
Input Capacitance: 9130pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$0.83
USD
Quantity
Unit Price
1
$0.825
50
$0.80
200
$0.78
1,000
$0.755
3,000+
$0.715
Product Variant Information section