Manufacturer Part #
STW20NM60
N-Channel 600 V 0.29 Ohm Flange Mount MDmesh Power MosFet - TO-247
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Tube Package Style:TO-247-3 Mounting Method:Flange Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
STMicroelectronics STW20NM60 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
STMicroelectronics STW20NM60 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 0.29Ω |
| Rated Power Dissipation: | 192|W |
| Qg Gate Charge: | 54nC |
| Package Style: | TO-247-3 |
| Mounting Method: | Flange Mount |
Features & Applications
The STW20NM60 MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout.
The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Features:
- High dv/dt and avalanche capabilities
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Applications:
- Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
16 Weeks
Quantity
Unit Price
30
$3.46
120
$3.40
450
$3.35
750
$3.33
1,500+
$3.27
Product Variant Information section
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-247-3
Mounting Method:
Flange Mount