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Manufacturer Part #

STW20NM60

N-Channel 600 V 0.29 Ohm Flange Mount MDmesh Power MosFet - TO-247

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STW20NM60 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.29Ω
Rated Power Dissipation: 192|W
Qg Gate Charge: 54nC
Package Style:  TO-247-3
Mounting Method: Flange Mount
Features & Applications
The STW20NM60 MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

Features:

  • High dv/dt and avalanche capabilities
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
600
Multiple Of:
30
Total
$2,010.00
USD
Quantity
Unit Price
30
$3.46
120
$3.40
450
$3.35
750
$3.33
1,500+
$3.27
Product Variant Information section