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Taiwan Semiconductor | TSM110NB04LCR RLG

Manufacturer Part #

TSM110NB04LCR RLG

40 V 12 A54 A 3.1W Surface Mount N-Channel MOSFET - PDFN-8 (5.2x5.75)

ECAD Model:
Mfr. Name: Taiwan Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2402
Product Specification Section
Taiwan Semiconductor TSM110NB04LCR RLG - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 11mΩ
Rated Power Dissipation: 3.1W
Qg Gate Charge: 23C
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 12A
Turn-on Delay Time: 1ns
Turn-off Delay Time: 13ns
Rise Time: 20ns
Fall Time: 13ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.9V
Technology: TrenchMOS
Input Capacitance: 1269pF
Package Style:  PDFN-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$787.50
USD
Quantity
Unit Price
2,500
$0.315
7,500
$0.31
12,500+
$0.305
Product Variant Information section