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Manufacturer Part #
SCTWA40N120G2V-4
1200 V 62 mOhm 36 A Silicon Carbide Power MOSFET - HiP247-4
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:60 per Cut Tape Package Style:TO-247-4 Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
STMicroelectronics SCTWA40N120G2V-4 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Obsolete
Obsolete
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STMicroelectronics SCTWA40N120G2V-4 - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 36A |
| Input Capacitance: | 1233pF |
| Power Dissipation: | 277W |
| Operating Temp Range: | -55°C to +200°C |
| Package Style: | TO-247-4 |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Lead Time:
N/A
Quantity
Unit Price
1
$8.95
3
$8.83
10
$8.71
20
$8.64
30+
$8.52
Product Variant Information section
Available Packaging
Package Qty:
60 per Cut Tape
Package Style:
TO-247-4
Mounting Method:
Through Hole