IRFS4010TRLPBF in Cut Tape by Infineon | Mosfets | Future Electronics
text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IRFS4010TRLPBF

Infineon | IRFS4010TRLPBF

Manufacturer Part #

IRFS4010TRLPBF

Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2236
Product Specification Section
Infineon IRFS4010TRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 4.7mΩ
Rated Power Dissipation: 375W
Qg Gate Charge: 143nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 180A
Turn-on Delay Time: 21ns
Turn-off Delay Time: 100ns
Rise Time: 86ns
Fall Time: 77ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Input Capacitance: 9575pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
8
USA:
8
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$2.00
USD
Quantity
Unit Price
1
$2.00
10
$1.82
40
$1.72
125
$1.63
400+
$1.54
Product Variant Information section