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Infineon Technologies | IPD30N08S2L21ATMA1

Manufacturer Part #

IPD30N08S2L21ATMA1

OptiMOS Series 75V 30A 20.5mΩ N‑Channel 136W Power Mosfet TO‑252‑3

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2436
Product Specification Section
Infineon Technologies IPD30N08S2L21ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 20.5mΩ
Rated Power Dissipation: 136|W
Qg Gate Charge: 56nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,075.00
USD
Quantity
Unit Price
2,500
$0.83
5,000
$0.815
7,500+
$0.805
Product Variant Information section