
Manufacturer Part #
IPD30N08S2L21ATMA1
Single N-Channel 75 V 20.5 mOhm 56 nC OptiMOS™ Power Mosfet - TO-252-3-11
Product Specification Section
Infineon IPD30N08S2L21ATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IPD30N08S2L21ATMA1 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 75V |
Drain-Source On Resistance-Max: | 20.5mΩ |
Rated Power Dissipation: | 136|W |
Qg Gate Charge: | 56nC |
Package Style: | TO-252-3 (DPAK) |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
10,000
USA:
10,000
On Order:
0
Factory Lead Time:
9 Weeks
Quantity
Unit Price
2,500
$0.675
5,000+
$0.66
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount