IPD30N08S2L21ATMA1 in Reel by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IPD30N08S2L21ATMA1

Single N-Channel 75 V 20.5 mOhm 56 nC OptiMOS™ Power Mosfet - TO-252-3-11

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2301
Product Specification Section
Infineon IPD30N08S2L21ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 20.5mΩ
Rated Power Dissipation: 136|W
Qg Gate Charge: 56nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
10,000
USA:
10,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,687.50
USD
Quantity
Unit Price
2,500
$0.675
5,000+
$0.66
Product Variant Information section