
Manufacturer Part #
IRF820STRRPBF
Single N-Channel 500 V 3 Ohms Surface Mount Power Mosfet - D2PAK
Product Specification Section
Vishay IRF820STRRPBF - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
File
Date
Location Change
01/23/2025 Details and Download
Description of Change: Vishay Siliconix announces the capacity transfer to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel. Products manufactured at Newport will be identified by a ?R? in the fourth position of the date code marked on the 2nd line of the partReason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel
Part Status:
Active
Active
Vishay IRF820STRRPBF - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 500V |
Drain-Source On Resistance-Max: | 3Ω |
Rated Power Dissipation: | 3.1W |
Qg Gate Charge: | 24nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 2.5A |
Turn-on Delay Time: | 8ns |
Turn-off Delay Time: | 33ns |
Rise Time: | 8.6ns |
Fall Time: | 16ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 4V |
Input Capacitance: | 360pF |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
N/A
Quantity
Unit Price
800
$0.905
1,600
$0.89
2,400
$0.885
3,200
$0.88
4,000+
$0.865
Product Variant Information section
Available Packaging
Package Qty:
800 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount