Name: Infineon IRFB4127PBF
Brand: Infineon
SKU: 1173870
Price: 2.13 USD
Availability: InStock

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refer to technical specifications

Manufacturer Part #

IRFB4127PBF

Single N-Channel 200 V 20 mOhm 150 nC HEXFET® Power Mosfet - TO-220-3

IRFB4127PBF Datasheet
ECAD Model: Convert this file for your ECAD tool by downloading the free Library Loader. Learn more about ECAD model.
Mfr. Name:	Infineon
Standard Pkg:	Product Variant Information section Available Packaging Package Qty: 50 per Tube Package Style: TO-220-3 (TO-220AB) Mounting Method: Through Hole
Date Code:	2426

Infineon IRFB4127PBF - Technical Attributes

Fet Type:	N-Ch
No of Channels:	1
Drain-to-Source Voltage [Vdss]:	200V
Drain-Source On Resistance-Max:	20mΩ
Rated Power Dissipation:	375W
Qg Gate Charge:	150nC
Gate-Source Voltage-Max [Vgss]:	20V
Drain Current:	76A
Turn-on Delay Time:	17ns
Turn-off Delay Time:	56ns
Rise Time:	18ns
Fall Time:	22ns
Operating Temp Range:	-55°C to +175°C
Gate Source Threshold:	5V
Technology:	Si
Height - Max:	9.02mm
Length:	10.67mm
Input Capacitance:	5380pF
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Through Hole

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Features & Applications

This new family of benchmark performance MOSFETS from 60V-200V offer up to 20% lower RDS(on) than previous versions. These MOSFETs are ideal for high current DC/DC switching applications and high current DC motor drive applications. The low RDS(on) helps improve thermal efficiency that is crucial to any high current design. In addition to low RDS(on), this is the first family of MOSFETs on the market to offer a package current rating of 195A for TO-220, D2PAK and TO-262 which is more than 60% improvement from typical package ratings. Most competitors only rate their packages to 120A. The D2PAK reduces RDS(on) even further by as much as 16% over a standard D2PAK and has a package ID rating of 240A which makes it one of the most rugged surface mount packages on the market.

The IRFB4127PbF features TrenchFET Gen 6 Technology. This 200Volt, 76Amp N-channel device in the TO-220 package, features maximum on-resistance of 20 milliohms at a 10-V gate drive voltage. Specifically designed for applications such as:

Power supplies
High power DC motors
Inverters
Power tools

Features and benefits include:

Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability
Lead-free, RoHS Compliant
Qualified to industrial grade and MSL1