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Infineon | IPB65R190C7ATMA2

Manufacturer Part #

IPB65R190C7ATMA2

IPB65R190C7 Series 650 V 13 A 190 mOhm 72 W 23 nC N-Channel MOSFET - TO-263

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2447
Product Specification Section
Infineon IPB65R190C7ATMA2 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.19Ω
Rated Power Dissipation: 72W
Qg Gate Charge: 23nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 13A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 54ns
Rise Time: 11ns
Fall Time: 9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Input Capacitance: 1150pF
Series: CoolMOS C7
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
10,000
USA:
10,000
On Order:Order inventroy details
20,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
11 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$1,220.00
USD
Quantity
Unit Price
1,000
$1.22
2,000
$1.21
4,000
$1.20
5,000+
$1.19
Product Variant Information section