IRLR120NTRPBF in Reel by Infineon | Mosfets | Future Electronics
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Infineon | IRLR120NTRPBF

Manufacturer Part #

IRLR120NTRPBF

Single N-Channel 100 V 0.185 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2421
Product Specification Section
Infineon IRLR120NTRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.185Ω
Rated Power Dissipation: 48|W
Qg Gate Charge: 20nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 10A
Turn-on Delay Time: 4ns
Turn-off Delay Time: 23ns
Rise Time: 35ns
Fall Time: 22ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Input Capacitance: 440pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
50,000
USA:
50,000
On Order:Order inventroy details
160,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$500.00
USD
Quantity
Unit Price
2,000
$0.25
6,000
$0.245
10,000+
$0.24
Product Variant Information section