text.skipToContent text.skipToNavigation

Manufacturer Part #

IRLR120NTRPBF

Single N-Channel 100 V 0.185 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2127
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.185Ω
Rated Power Dissipation: 48|W
Qg Gate Charge: 20nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 10A
Turn-on Delay Time: 4ns
Turn-off Delay Time: 23ns
Rise Time: 35ns
Fall Time: 22ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Input Capacitance: 440pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
72,000
USA:
72,000
76,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
52 Weeks
Minimum Order:
2000
Multiple Of:
2000
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,240.00
USD
Quantity
Web Price
2,000
$0.62
4,000
$0.505
6,000
$0.50
8,000+
$0.495
Product Variant Information section