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Infineon Technologies | IRLML0100TRPBF

Manufacturer Part #

IRLML0100TRPBF

Single N-Channel 100 V 235 mOhm 2.5 nC HEXFET® Power Mosfet - MICRO-3

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2550
Product Specification Section
Infineon Technologies IRLML0100TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 235mΩ
Rated Power Dissipation: 1.3W
Qg Gate Charge: 2.5nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 1.6A
Turn-on Delay Time: 2.2ns
Turn-off Delay Time: 9ns
Rise Time: 2.1ns
Fall Time: 3.6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.5V
Technology: Si
Height - Max: 1.02mm
Length: 3.04mm
Input Capacitance: 290pF
Package Style:  MICRO-3
Mounting Method: Surface Mount
Features & Applications
IRLML0100TRPBF is a single N-CHANNEL MOSFET with Drain-to-Source Breakdown Voltage of 100 V, Drain Current of 1.6 A, Static Drain-to-Source On-Resistance of 235 mΩ, Total Gate Charge of 2.5 nC.

The IRLML0100TRPBF belongs to SOT-23 MOSFET family covers the full range of voltages from -30 V to 100 V with different levels of RDS(on) and gate charge (Qg) to provide an improved and broader range of design options for customers looking for a compact, efficient and cost-effective solution.

Features:

  • Industry-standard pinout   
  • Compatible with existing Surface Mount Techniques 
  • RoHS compliant containing no lead, no bromide and no halogen
  • MSL1, Consumer qualification

Benefits:

  • Multi-vendor compatibility  
  • Easier manufacturing
  • Environmentally friendly
  • Increased reliability

Application:

  • System/Load Switch
Pricing Section
Global Stock:
84,000
USA:
84,000
On Order:Order inventroy details
1,197,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$474.00
USD
Quantity
Unit Price
3,000
$0.158
9,000
$0.155
30,000
$0.152
45,000+
$0.15
Product Variant Information section