IRF3808STRLPBF in Reel by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IRF3808STRLPBF

Single N-Channel 75 V 7 mOhm 150 nC HEXFET® Power Mosfet - D2-PAK-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF3808STRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 7mΩ
Rated Power Dissipation: 200|W
Qg Gate Charge: 150nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$928.00
USD
Quantity
Unit Price
800
$1.16
1,600
$1.15
4,000+
$1.13
Product Variant Information section