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Manufacturer Part #
IRF3808STRLPBF
Single N-Channel 75 V 7 mOhm 150 nC HEXFET® Power Mosfet - D2-PAK-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:800 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2426 | ||||||||||
Infineon IRF3808STRLPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF3808STRLPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irf3808strlpbf-infineon-3183557
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF3808STRLPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irf3808strlpbf-infineon-3183557
Infineon IRF3808STRLPBF - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 75V |
| Drain-Source On Resistance-Max: | 7mΩ |
| Rated Power Dissipation: | 200|W |
| Qg Gate Charge: | 150nC |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
800 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount