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Diodes Incorporated | DMN3032LFDBQ-7

Manufacturer Part #

DMN3032LFDBQ-7

DMN Series 30 V 30 mOhm SMT Dual N-Ch Enhancement Mode Mosfet - U-DFN-2020-6

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN3032LFDBQ-7 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 30mΩ
Rated Power Dissipation: 1W
Qg Gate Charge: 10.6nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 6.2A
Turn-on Delay Time: 2.2ns
Turn-off Delay Time: 9.7ns
Rise Time: 2.6ns
Fall Time: 2ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.5V
Input Capacitance: 500pF
Package Style:  UDFN-6
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$645.00
USD
Quantity
Unit Price
3,000
$0.215
15,000
$0.21
30,000+
$0.205
Product Variant Information section