
Manufacturer Part #
BSZ086P03NS3GATMA1
Single P-Channel 30 V 8.6 mOhm 43.2 nC OptiMOS™ Power Mosfet - TSDSON-8
Product Specification Section
Infineon BSZ086P03NS3GATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Package and Dimension Change
11/28/2024 Details and Download
Description:NO change on electrical, thermal parameters and reliability as proven via product qualification and characterization. NO change in existing datasheet parameters NO change in quality and reliability. Processes are optimized to meet product performance according to already applied Infineon specification
Part Status:
Active
Active
Infineon BSZ086P03NS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: | P-Ch |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 8.6mΩ |
Rated Power Dissipation: | 2.1|W |
Qg Gate Charge: | 43.2nC |
Package Style: | TSDSON-8 |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
85,000
USA:
85,000
Factory Lead Time:
14 Weeks
Quantity
Unit Price
5,000
$0.22
15,000+
$0.215
Product Variant Information section
Available Packaging
Package Qty:
5000 per Reel
Package Style:
TSDSON-8
Mounting Method:
Surface Mount