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Manufacturer Part #
AIMBG120R010M1XTMA1
N-Channel 1200 V 205 A Surface Mount Silicon Carbide MOSFET - PG-TO-263-7
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2 per Package Style:TO-263-7 (D2PAK7) Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Infineon AIMBG120R010M1XTMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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Infineon AIMBG120R010M1XTMA1 - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 205A |
| Input Capacitance: | 5703pF |
| Power Dissipation: | 882W |
| Operating Temp Range: | -55°C to +175°C |
| Package Style: | TO-263-7 (D2PAK7) |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
26 Weeks
Quantity
Unit Price
1+
$28.88
Product Variant Information section
Available Packaging
Package Qty:
2 per
Package Style:
TO-263-7 (D2PAK7)
Mounting Method:
Surface Mount