IPA60R099P7XKSA1 in Tube by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IPA60R099P7XKSA1

Single N-Channel 600 V 99 mOhm 45 nC CoolMOS™ Power Mosfet - TO-220-3FP

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPA60R099P7XKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.099Ω
Rated Power Dissipation: 29W
Qg Gate Charge: 45nC
Drain Current: 10µA
Turn-on Delay Time: 23ns
Turn-off Delay Time: 89ns
Rise Time: 15ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Input Capacitance: 1952pF
Package Style:  TO-220FP (TO-220FPAB)
Mounting Method: Flange Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$790.00
USD
Quantity
Unit Price
50
$1.58
1,000
$1.57
1,500
$1.56
5,000+
$1.54
Product Variant Information section