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Manufacturer Part #
IRFU220NPBF
Single N-Channel 200 V 600 mOhm 23 nC 4HEXFET® Power Mosfet - TO-251
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:75 per Tube Package Style:TO-251 (IPAK) Mounting Method:Through Hole | ||||||||||
| Date Code: | 2147 | ||||||||||
Infineon IRFU220NPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Subject: Introduction of an additional wafer production at Infineon Technologies Kulim, Malaysia and change of wafer diameter from 150mm to 200mm for several G5.5 MOSFETReason: The wafer production of the affected products will be extended to Infineon Technologies Kulim, according to global Infineon production strategy.
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
Infineon IRFU220NPBF - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 600mΩ |
| Rated Power Dissipation: | 43W |
| Qg Gate Charge: | 23nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 5A |
| Turn-on Delay Time: | 6.4ns |
| Turn-off Delay Time: | 20ns |
| Rise Time: | 11ns |
| Fall Time: | 12ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 6.22mm |
| Length: | 6.73mm |
| Input Capacitance: | 300pF |
| Package Style: | TO-251 (IPAK) |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
75 per Tube
Package Style:
TO-251 (IPAK)
Mounting Method:
Through Hole