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Manufacturer Part #

DMN2020LSN-7

DMN2020LSN Series 20V 6.9 A N-Channel Enhancement Mode Mosfet - SC-59-3

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN2020LSN-7 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 20mΩ
Rated Power Dissipation: 610|mW
Qg Gate Charge: 11.6nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 6.9A
Turn-on Delay Time: 11.67ns
Turn-off Delay Time: 35.89ns
Rise Time: 12.49ns
Fall Time: 12.33ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Height - Max: 1.3mm
Length: 3mm
Input Capacitance: 1149pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
3,000
Factory Stock:Factory Stock:
2,649,000
Factory Lead Time:
12 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$309.00
USD
Quantity
Unit Price
3,000
$0.103
9,000
$0.10
15,000
$0.0992
30,000
$0.0977
60,000+
$0.0952
Product Variant Information section