Manufacturer Part #
TIP110G
TIP Series 60 V 2 A NPN Medium Power Darlington Silicon Transistor - TO-220AB
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Flange Mount | ||||||||||
| Date Code: | 2428 | ||||||||||
Product Specification Section
onsemi TIP110G - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi TIP110G - Technical Attributes
Attributes Table
| Polarity: | NPN |
| Type: | Darlington |
| CE Voltage-Max: | 60V |
| Collector Current Max: | 2A |
| Power Dissipation-Tot: | 2W |
| DC Current Gain-Min: | 1000 |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Flange Mount |
Features & Applications
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary devices.
Features:
- High DC Current Gain - hFE = 2500 (typ) @ IC = 1.0 Adc
- Collector-Emitter Sustaining Voltage @ 30 mA
- VCEO(sus) = 60 Vdc (Min) TIP110, TIP115
- VCEO(sus) = 80 Vdc (Min) TIP111, TIP116
- VCEO(sus) = 100 Vdc (Min) TIP112, TIP117
- Low Collector-Emitter Saturation Voltage
- VCE(sat) = 2.5 Vdc (Max) @ IC= 2.0 Adc
- = 4.0 Vdc (Max) @ IC= 5.0 Adc
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors
- Compact TO-220 AB Package
- Pb-Free Packages are Available
Pricing Section
Global Stock:
1,030
USA:
1,030
On Order:
0
Factory Lead Time:
11 Weeks
Quantity
Unit Price
1
$0.27
125
$0.26
300
$0.255
1,250
$0.25
3,000+
$0.24
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Flange Mount