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Manufacturer Part #

RQ3L050GNTB

MOSFET Nch 60V 12A Si MOSFET

ECAD Model:
Mfr. Name: ROHM
Standard Pkg:
Product Variant Information section
Date Code: 2327
Product Specification Section
ROHM RQ3L050GNTB - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 61mΩ
Rated Power Dissipation: 14.8W
Qg Gate Charge: 5.3nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 13A
Turn-on Delay Time: 7.4ns
Turn-off Delay Time: 17.4ns
Rise Time: 4.9ns
Fall Time: 3.7ns
Operating Temp Range: 150°C
Gate Source Threshold: 2.5V
Input Capacitance: 300pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
3,000
USA:
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$930.00
USD
Quantity
Unit Price
3,000
$0.31
6,000
$0.305
15,000+
$0.30
Product Variant Information section