IPD031N06L3GATMA1 in Reel by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IPD031N06L3GATMA1

Single N-Channel 60 V 3.1 mOhm 59 nC OptiMOS™ Power Mosfet - DPAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2449
Product Specification Section
Infineon IPD031N06L3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 3.1mΩ
Rated Power Dissipation: 167|W
Qg Gate Charge: 59nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,500
USA:
2,500
2,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,275.00
USD
Quantity
Unit Price
2,500+
$0.91
Product Variant Information section