
Manufacturer Part #
IPD031N06L3GATMA1
Single N-Channel 60 V 3.1 mOhm 59 nC OptiMOS™ Power Mosfet - DPAK
Product Specification Section
Infineon IPD031N06L3GATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IPD031N06L3GATMA1 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 60V |
Drain-Source On Resistance-Max: | 3.1mΩ |
Rated Power Dissipation: | 167|W |
Qg Gate Charge: | 59nC |
Package Style: | TO-252-3 (DPAK) |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
2,500
USA:
2,500
Factory Lead Time:
14 Weeks
Quantity
Unit Price
2,500+
$0.91
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount