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Manufacturer Part #
IRFR6215TRPBF
Single P-Channel 150 V 0.58 Ohm 66 nC HEXFET® Power Mosfet - TO-252AA
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2000 per Reel Package Style:TO-252AA Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2519 | ||||||||||
Infineon IRFR6215TRPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Detailed change information:Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason :The wafer production of the affected products will be transferred to Infineon Technologies Kulim, according to global Infineon production strategy.
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
Part Status:
Infineon IRFR6215TRPBF - Technical Attributes
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | -150V |
| Drain-Source On Resistance-Max: | 0.58Ω |
| Rated Power Dissipation: | 110W |
| Qg Gate Charge: | 66nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | -13A |
| Turn-on Delay Time: | 14ns |
| Turn-off Delay Time: | 53ns |
| Rise Time: | 36ns |
| Fall Time: | 37ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | -4V |
| Technology: | Advanced Process Technology |
| Height - Max: | 2.39mm |
| Length: | 6.73mm |
| Input Capacitance: | 860pF |
| Package Style: | TO-252AA |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
2000 per Reel
Package Style:
TO-252AA
Mounting Method:
Surface Mount