STB11NM80T4 in Reel by STMicroelectronics | Mosfets | Future Electronics
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Manufacturer Part #

STB11NM80T4

N-Channel 800 V 35 mΩ 150 W Surface Mount Power MosFet - D2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2411
Product Specification Section
STMicroelectronics STB11NM80T4 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 0.4Ω
Rated Power Dissipation: 150|W
Qg Gate Charge: 43.6nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The STB11NM80T4 is a MDmesh™ associates the multiple drain process with the company’s PowerMesh™ horizontal layout assuring an outstanding low onresistance.

The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

Faetures:

  • Low input capacitance and gate charge
  • Low gate input resistance
  • Best RDS(on)*Qg in the industry

Application:

  • Switching applications
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Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,900.00
USD
Quantity
Unit Price
1,000+
$3.90
Product Variant Information section