IRFB38N20DPBF in Tube by Infineon | Mosfets | Future Electronics
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Infineon | IRFB38N20DPBF

Manufacturer Part #

IRFB38N20DPBF

Single N-Channel 200 V 0.054 Ohm 91 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2431
Product Specification Section
Infineon IRFB38N20DPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 0.054Ω
Rated Power Dissipation: 3.8W
Qg Gate Charge: 91nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 43A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 29ns
Rise Time: 95ns
Fall Time: 47ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 9.02mm
Length: 10.67mm
Input Capacitance: 2900pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
1000
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,020.00
USD
Quantity
Unit Price
1
$1.10
40
$1.07
150
$1.04
400
$1.02
1,500+
$0.96
Product Variant Information section