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Infineon | BSZ060NE2LSATMA1

Manufacturer Part #

BSZ060NE2LSATMA1

Single N-Channel 25 V 6 mOhm 9.1 nC OptiMOS™ Power Mosfet - TSDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSZ060NE2LSATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 25V
Drain-Source On Resistance-Max: 6mΩ
Rated Power Dissipation: 2.1W
Qg Gate Charge: 9.1nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 40A
Turn-on Delay Time: 2.5ns
Turn-off Delay Time: 11ns
Rise Time: 2.2ns
Fall Time: 1.8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: OptiMOS
Input Capacitance: 670pF
Package Style:  TSDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,050.00
USD
Quantity
Unit Price
5,000
$0.21
10,000
$0.205
25,000+
$0.20
Product Variant Information section